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Metamorphic Growth of III-V Devices on Silicon Toward Electronic-Photonic Monolithic Integration

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Abstract

The key challenge of integrating electronics and photonics is to combine high-performance optical and electronic compound devices with conventional silicon manufacturing technologies. Metamorphic growth of very low-defect GaAs and InP on (100) Si and alloy structures will be reported. Article not available.

© 2015 Optical Society of America

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