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Conferences > ACPC > 2016 > AF2A > AF2A.57

Inverse Design of a Compact Silicon-on-Insulator T-junction

Chong Meng, Jifang Qiu, Ye Tian, Zi Ye, and Jian Wu

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Abstract

A SOI T-junction with an ultra-compact footprint of 2.8 × 2.8 μm2 is proposed. Simulation results show that the insertion loss is less than 1dB with nearly identical power ratio in wavelength range from 1534 nm to 1576 nm.

© 2016 Optical Society of America

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