Abstract
We propose a novel InP-based mushroom-type vertical-illumination PIN photodiode. By using mushroom-type structure, numerical calculation results at 3 V bias, 1.55 μm wavelength show that the optimized photodiode with 700nm absorption layer, has a 3-dB bandwidth of 29.81 GHz, which increased by 35.62% comparing with conventional PIN photodiode.
© 2016 Optical Society of America
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