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Germanium Photodetectors on Amorphous Substrates for Back-End-Of-Line Process Integration

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Abstract

Germanium photodetector are fabricated on silicon dioxide at 350C in order to demonstrate monolithic compatibility with back-end-of-line CMOS manufacturing. Final MSM photodetectors demonstrate a net gain with an internal quantum efficiency greater than 100%.

© 2016 Optical Society of America

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