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Thermal Analysis of Ultra-broadband Lasing InAs/InP Quantum-dash Lasers

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Abstract

Thermal analysis of InAs/InP quantum-dash lasers revealed ~6(45)°C/W thermal resistance value for 15(2)µm ridge-width devices, thus exhibiting an inverse relationship. This further affirms thermionic emission process being responsible for enhanced lasing-bandwidth for narrow ridge-width devices.

© 2017 Optical Society of America

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