Frequency Response of Directly Modulated III-nitride Based Blue Laser Diode at Different Temperature

Bin Xue; Bin Xue; Bin Xue; Zhe Liu; Zhe Liu; Jie Yang; Liangsen Feng; Ning Zhang; Ning Zhang; Junxi Wang; Junxi Wang; Jinmin Li; Jinmin Li

doi:10.1364/ACPC.2017.Su2A.108

Asia Communications and Photonics Conference
OSA Technical Digest (online) (Optica Publishing Group, 2017),
paper Su2A.108
•https://doi.org/10.1364/ACPC.2017.Su2A.108

Frequency Response of Directly Modulated III-nitride Based Blue Laser Diode at Different Temperature

Bin Xue, Zhe Liu, Jie Yang, Liangsen Feng, Ning Zhang, Junxi Wang, and Jinmin Li

Asia Communications and Photonics Conference 2017

Guangzhou, Guangdong China
10–13 November 2017
ISBN: 978-1-943580-34-7

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B. Xue, Z. Liu, J. Yang, L. Feng, N. Zhang, J. Wang, and J. Li, "Frequency Response of Directly Modulated III-nitride Based Blue Laser Diode at Different Temperature," in Asia Communications and Photonics Conference, OSA Technical Digest (online) (Optica Publishing Group, 2017), paper Su2A.108.

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Abstract

Frequency response of a 450nm laser diode (LD) was measured under continuous-wave (cw) operation within a temperature range of 10°C to 40°C. −3dB bandwidth of the device exceeded 1GHz above threshold current. Smaller injection current density was needed to reach the same modulation bandwidth at lower temperature.

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