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Optimization of InAs/InGaAs quantum-dot microdisk lasers directly grown on silicon

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Abstract

We demonstrate firstly an optimized InAs/InGaAs quantum-dot microdisk laser structure on silicon. The simulations indicate that Q-factor can exceed 106 at wavelength of 1.3μm with the diameter and the cladding layer thickness of 7μm and 1.75μm.

© 2017 Optical Society of America

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