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  • Asia Communications and Photonics Conference (ACP) 2018
  • OSA Technical Digest (Optica Publishing Group, 2018),
  • paper M2I.2

InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm

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Highly uniform (111)-faceted Si sawtooth with underlying hollow structures is formed by homo-epitaxy on a U-shape patterned Si (001) substrate. With in-situ III-V growth on such substrates by the III-V/IV dual chamber molecular beam epitaxy, a high-quality GaAs layer is obtained with threading dislocation density approximately ~ 106 cm-2 via electron channeling contrast image (ECCI) method. Strong room-temperature emission of InAs/GaAs and InAs/InGaAs quantum dots (QDs) at O-band (1300 nm) and C/L-band (1550 nm) telecommunication wavelengths are both achieved on Si (001) substrates.

© 2018 The Author(s)

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