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  • Asia Communications and Photonics Conference (ACP) 2018
  • OSA Technical Digest (Optica Publishing Group, 2018),
  • paper S4J.5

Speed Characterization of InGaAs/GaAsSb Type-II Quantum Wells PIN Photodiodes

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Abstract

A normal incident InGaAs/GaAsSb type-II quantum wells PIN photodiode is demonstrated for 2µm wavelength high speed application. Results show this device has capability for 2µm high speed operation with 3dB-bandwidth of 2.93 GHz.

© 2018 The Author(s)

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