High-speed partial-depleted-absorber photodiode based on GaAs/AlGaAs at 850nm wavelength

Zhiyang Xie; Zhiyang Xie; Zhiyang Xie; Zhiqi Zhou; Zhiqi Zhou; Zhiqi Zhou; Linze Li; Linze Li; Linze Li; Haiming Ji; Baile Chen

doi:10.1364/ACPC.2020.T3G.2

Asia Communications and Photonics Conference/International Conference on Information Photonics and Optical Communications 2020 (ACP/IPOC)
OSA Technical Digest (Optica Publishing Group, 2020),
paper T3G.2
•https://doi.org/10.1364/ACPC.2020.T3G.2

High-speed partial-depleted-absorber photodiode based on GaAs/AlGaAs at 850nm wavelength

Zhiyang Xie, Zhiqi Zhou, Linze Li, Haiming Ji, and Baile Chen

Asia Communications and Photonics Conference 2020

Beijing China
24–27 October 2020
ISBN: 978-1-943580-82-8

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Advanced Photonic Devices (T3G)

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Z. Xie, Z. Zhou, L. Li, H. Ji, and B. Chen, "High-speed partial-depleted-absorber photodiode based on GaAs/AlGaAs at 850nm wavelength," in Asia Communications and Photonics Conference/International Conference on Information Photonics and Optical Communications 2020 (ACP/IPOC), K. Xu, D. Simeonidou, C. Chang-Hasnain, N. Wada, X. Ren, Z. Zhukov, P. Perry Shum, Y. Ji, J. Zhang, X. Zhou, C. Lu, and L. Wosinska, eds., OSA Technical Digest (Optica Publishing Group, 2020), paper T3G.2.

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Abstract

We report a high-speed partial-depleted-absorber photodiode based on GaAs/AlGaAs with 3-dB bandwidth of 17.9 GHz at 850nm wavelength. Device exhibits responsivity of 0.466 A/W and dark current of 1.09 pA under −3 V bias.

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