Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Trap Characterization of InGaN/GaN Blue Light Emitting Diode Grown on Si Substrate

Not Accessible

Your library or personal account may give you access

Abstract

Three hole traps and one electron trap were revealed for InGaN/GaN blue LEDs grown on Si by a combination of DLTS and ICTS. Time-resolved thermal-enhanced emission process of deep hole trap was investigated.

© 2021 The Author(s)

PDF Article
More Like This
Blue light-emitting diode fabrication of an InGaN/GaN epilayer bonded on a Si substrate by laser liftoff

C. C. Chen, M. C. Hsu, J. R. Hsiao, J. L. Yen, Y. J. Yang, C. H. Lin, L. A. Wang, and C. C. Liu
WC1_2 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2001

Highly efficient InGaN/GaN blue LED grown on Si (111) substrate

Jun-Youn Kim, Yongjo Tak, Jae Won Lee, Hyun-Gi Hong, Suhee Chae, Hyoji Choi, Bokki Min, Youngsoo Park, Minho Kim, Seongsuk Lee, Namgoo Cha, Yoonhee Shin, Jong-Ryeol Kim, and Jong-In Shim
CWF1 CLEO: Science and Innovations (CLEO:S&I) 2011

Reduction of Efficiency Droop in Semipolar (1 1 ¯01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates

C. H. Chiu, D. W. Lin, C. C. Lin, Z. Y. Li, H. C. Kuo, T. C. Lu, S. C. Wang, W. T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki
JWA94 CLEO: Applications and Technology (CLEO:A&T) 2011

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.