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Conferences > ACPC > 2021 > W1C > W1C.4

O-band P-doped InAs/GaAs quantum dot lasers directly grown on SOI substrate

Jing-Zhi Huang, Wen-Qi wei, Jia-Jian Chen, Zi-Hao Wang, Ting Wang, and Jian-Jun Zhang

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Abstract

This work demonstrated the first electrically pumped ground-state InAs QD narrow ridge lasers emission at 1310 nm (O-band) epitaxially grown on standard SOI substrate with continuous-wave (CW) current injection at room temperature.

© 2021 The Author(s)

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