Terahertz camera-less imaging of deep trench and whole SiC wafer defects

Hrishikesh Das; Bruce Greenwood; Anis Rahman

doi:10.1364/AIO.2021.Th1A.4

Applied Industrial Optics 2021
OSA Technical Digest (Optica Publishing Group, 2021),
paper Th1A.4
•https://doi.org/10.1364/AIO.2021.Th1A.4

Terahertz camera-less imaging of deep trench and whole SiC wafer defects

Hrishikesh Das, Bruce Greenwood, and Anis Rahman

Applied Industrial Optics: Spectroscopy, Imaging and Metrology 2021

Washington, DC United States
26–28 July 2021
ISBN: 978-1-943580-93-4

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Metasurfaces Meet My Reality (Th1A)

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H. Das, B. Greenwood, and A. Rahman, "Terahertz camera-less imaging of deep trench and whole SiC wafer defects," in Applied Industrial Optics 2021, G. Miller, A. Smith, I. Capraro, and J. Majors, eds., OSA Technical Digest (Optica Publishing Group, 2021), paper Th1A.4.

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Abstract

Terahertz camera-less imaging was conducted on deep trench etched on Si, and whole SiC wafers. It is demonstrated that terahertz 3D approach can see more and deeper features on both samples.

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