Growth of orientation-patterned semiconductors for nonlinear optical frequency conversion

Candace Lynch; Vladimir Tassev; George Bryant; Cal Yapp; David Bliss

doi:10.1364/AIOM.2009.AWA1

Frontiers in Optics 2009/Laser Science XXV/Fall 2009 OSA Optics & Photonics Technical Digest
OSA Technical Digest (CD) (Optica Publishing Group, 2009),
paper AWA1
•https://doi.org/10.1364/AIOM.2009.AWA1

Growth of orientation-patterned semiconductors for nonlinear optical frequency conversion

Candace Lynch, Vladimir Tassev, George Bryant, Cal Yapp, and David Bliss

Advances in Optical Materials 2009

San Jose, California United States
14–15 October 2009
ISBN: 978-1-55752-878-0

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C. Lynch, V. Tassev, G. Bryant, C. Yapp, and D. Bliss, "Growth of orientation-patterned semiconductors for nonlinear optical frequency conversion," in Frontiers in Optics 2009/Laser Science XXV/Fall 2009 OSA Optics & Photonics Technical Digest, OSA Technical Digest (CD) (Optica Publishing Group, 2009), paper AWA1.

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Abstract

Millimeter-thick crystals of orientation-patterned GaAs have been grown using low pressure Hydride Vapor Phase Epitaxy for use in the generation of mid-IR and THz radiation.

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