Abstract
We report on the optoelectronic properties of bulk Germanium islands formed on Silicon by Molecular Beam Epitaxy. More specifically, we will discuss the role of strains and doping in favoring efficient light-emission at telecommunication wavelengths.
© 2009 Optical Society of America
PDF ArticleMore Like This
L. Nataraj, N. Sustersic, M. Coppinger, F. Gerlein, J. Kolodzey, and S. G. Cloutier
FMH2 Frontiers in Optics (FiO) 2010
P. O. Vaccaro, M. Hirai, K. Fujita, and T. Watanabe
QThG22 Quantum Electronics and Laser Science Conference (CLEO:FS) 1995
Latha Nataraj, Fan Xu, Mark Bundy, and Sylvain G. Cloutier
JTh2A.15 Advances in Optical Materials (AIOM) 2012