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Conferences > AIOM > 2009 > AWC > AWC5
  • Frontiers in Optics 2009/Laser Science XXV/Fall 2009 OSA Optics & Photonics Technical Digest
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper AWC5
  • •https://doi.org/10.1364/AIOM.2009.AWC5

Epitaxial Nd:Sapphire films – candidate solid state laser material for 1096 nm emission

Raveen Kumaran, Scott E. Webster, Shawn Penson, Wei Li, and Thomas Tiedje

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Abstract

Nd:Sapphire films grown by molecular beam epitaxy produce sharp emission lines due to identical-site doping not observed in bulk sapphire crystals. The 1096 nm line is a lasing candidate with an Nd:YVO4-like emission cross section.

© 2009 Optical Society of America

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