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Conferences > AIOM > 2012 > ITh5B > ITh5B.2

Current Injection Emitters at 1.54 µm Based on Erbium Doped GaN p-i-n Structures

I-Wen Feng, Jing Li, Jingyu Lin, Hongxing Jiang, and John Zavada

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Abstract

GaN:Er p-i-n structures were prepared by metal organic chemical vapor deposition with GaN:Er active layers grown at various pressures. The effect of GaN:Er growth pressure on the performance of these p-i-n structures was studied.

© 2012 Optical Society of America

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