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By means of 0.25 pm, 0.4 pm and 0.5 pm-thick i-GaN layers, we have successfully proved the reliability of nitride-based p-i-n photodetectors (PDs) was highly sensitive to the thickness of intrinsic GaN layers. After current aging, the p-i-n PDs with thin i-layer exhibited a poor electrical strength.
© 2008 Optical Society of America
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