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Enhanced light extraction in AlInGaN UV light-emitting diodes by embedded AlN/AlGaN distributed Bragg reflector

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High-reflectivity AlN/AlGaN UV distributed Bragg reflector was first proposed to be embedded between the emitting region and the n-GaN layer of the GaN-based AlInGaN UV light-emitting diodes to enhanced the light extraction efficiency.

© 2013 Optical Society of America

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