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Thickness Dependence of Electrical and Optical Properties of Indium Tin Oxide Film Deposited by Radio Frequency Magnetron Sputtering

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Hall, X-ray diffraction and transmission measurements revealed that the carrier concentration and mobility of indium tin oxide film increased due to its microstructure evolution while its thickness enlarged. Burstein-Moss effect led to its bandgap extension.

© 2013 Optical Society of America

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