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Conferences > AOEE > 2013 > ASa3A > ASa3A.24

Thickness Dependence of Electrical and Optical Properties of Indium Tin Oxide Film Deposited by Radio Frequency Magnetron Sputtering

Ge Wang, Lei Zhao, Hongwei Diao, Jingwei Chen, Baojun Yan, Guanghong Wang, and Wenjing Wang

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Abstract

Hall, X-ray diffraction and transmission measurements revealed that the carrier concentration and mobility of indium tin oxide film increased due to its microstructure evolution while its thickness enlarged. Burstein-Moss effect led to its bandgap extension.

© 2013 Optical Society of America

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