Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > AOEE > 2013 > ASa4A > ASa4A.3

Co and Ti Hyperdoped Si–the Possible Intermediate Material for PV Application

Yurong Zhou, Fengzhen Liu, and Meifang Zhu

Not Accessible

Your library or personal account may give you access

Abstract

Insulator-to-metal transition has been observed in the temperature dependences of resistance of Co/ Ti doped Si as the doping concentration is higher than Mott limit. The transitions imply the formation of an intermediate band originated from the Ti or Co deep levels in Si. The Co or Ti hyperdoped Si is a kind of potential material for intermediate band solar cells.

© 2013 Optical Society of America

PDF Article
More Like This
Hyperdoped Silicon Characterization and Photodetectors

Yining Liu, Wenjie Yang, Quentin Hudspeth, Jeffrey M. Warrender, James S. Williams, and Jay Mathews
JW4A.51 Frontiers in Optics (FiO) 2017

Evaluating carrier lifetimes in laser hyperdoped silicon using terahertz spectroscopy

Senali Dissanayake, Philippe Chow, Shao Qi Lim, Matthew Wilkins, Eduard Dumitresc, Wenjie Yang, Quentin Hudspeth, Jacob Krich, Jim Williams, Jeffrey Warrender, and Meng-Ju Sher
JTu3O.6 CLEO: Applications and Technology (CLEO:A&T) 2018

Black Silicon Photodetector with Broadband Spectral Photoresponsivity and High Gain by Ti-hyperdoping

Song Huang, Jinze Cao, Jiaxin Cao, Qiang Wu, Weiqing Gao, and Jingjun Xu
ATu4C.7 CLEO: Applications and Technology (CLEO:A&T) 2022

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use