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Co and Ti Hyperdoped Si–the Possible Intermediate Material for PV Application

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Abstract

Insulator-to-metal transition has been observed in the temperature dependences of resistance of Co/ Ti doped Si as the doping concentration is higher than Mott limit. The transitions imply the formation of an intermediate band originated from the Ti or Co deep levels in Si. The Co or Ti hyperdoped Si is a kind of potential material for intermediate band solar cells.

© 2013 Optical Society of America

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