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Preparation of High-performance Single-junction Hydrogenated Amorphous Silicon Germanium Solar Cells

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Abstract

The a-Si:H buffer layer at p/i interface and the annealing treatment were introduced to improve the performance of the single-junction a-SiGe:H solar cell on glass. After optimization, the conversion efficiency of 6.76% was obtained.

© 2013 Optical Society of America

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