Abstract

An AMOLED backplane was fabricated using indium-zinc-oxide (IZO) thin-film transistors (TFTs) with back-channel-etch (BCE) structure. During TFT fabrication, a layer of Mo film was deposited onto IZO active layer, and then patterned by a wet-etch-method as source and drain electrodes. The etch rate selectivity of Mo to IZO was as high as 4×10⁴. This TFT exhibited high mobility and good electrical stability. Furthermore, it had the advantages of low cost and environment protection, because etch-stopper-layer and air-polluted dry-etch process were not require in this TFT fabricating method.

© 2013 Optical Society of America