Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

AMOLED backplane with back-channel etched oxide thin film transistors

Not Accessible

Your library or personal account may give you access

Abstract

An AMOLED backplane was fabricated using indium-zinc-oxide (IZO) thin-film transistors (TFTs) with back-channel-etch (BCE) structure. During TFT fabrication, a layer of Mo film was deposited onto IZO active layer, and then patterned by a wet-etch-method as source and drain electrodes. The etch rate selectivity of Mo to IZO was as high as 4×104. This TFT exhibited high mobility and good electrical stability. Furthermore, it had the advantages of low cost and environment protection, because etch-stopper-layer and air-polluted dry-etch process were not require in this TFT fabricating method.

© 2013 Optical Society of America

PDF Article
More Like This
Organic Thin-Film Transistor from Solution-Processed Precursor Film

Reiji Hattori
TuE1_1 Conference on Lasers and Electro-Optics/Pacific Rim (CLEOPR) 2007

Near-infrared Femtosecond Laser-Processed Thin-Film Transistor

Zun-Hao Chen, Jia-Min Shieh, Bau-Tong Dai, Yi-Chao Wang, and Ci-Ling Pan
CFG7 Conference on Lasers and Electro-Optics (CLEO) 2005

Solution-Processed IGZO/CNTs Composite Thin Film Transistors for Megahertz Application

Lei Liao and Xingqiang Liu
PT3E.1 Photonics for Energy (PFE) 2015

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2022 | Optica Publishing Group. All Rights Reserved