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Photoinduced charge transfer processes in photorefractive CdTe:Ge

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Abstract

Charge redistribution between two different photorefractive centers in CdTe:Ge allows for enhancement of two-beam coupling at 1.064 µm and 1.32 µm by the additional illumination of the sample. The gain factor reached at 1.064 µm without external electric field is only 20% smaller than the theoretical limit for CdTe. The "net" gain is obtained at 1.064 µm as well as at 1.32 µm and 1.3 times amplification of the signal wave is achieved at 1.06 µm with no applied field.

© 1999 Optical Society of America

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