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Conferences > ASLA > 1999 > HHSL > 10

Performance and reliability of high-power 670-690 nm CW laser diode bars grown by solid source molecular beam epitaxy

P. J. Corvini, P. A. Bournes, F. Fang, M. Finander, M. Jansen, R. F. Nabiev, M. Widman, S. Orsila, M. Saarinen, A. Salokatve, P. Savolainen, M. Toivonen, and P. Uusimaa

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Abstract

High-power AlGalnP laser diodes in the 670-690 nm range are needed for a variety of applications, including pumping, illumination, displays, and medicine.

© 1999 Optical Society of America

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