Amplification of 25-ps AIGaAs Laser Diode Pulses at 1 kHz in Titanium-Doped Sapphire

Santanu Basu; Paul May; Jean-Marc Halbout

doi:10.1364/ASSL.1989.AA5

Advanced Solid State Lasers
OSA Proceedings Series (Optica Publishing Group, 1989),
paper AA5
•https://doi.org/10.1364/ASSL.1989.AA5

Amplification of 25-ps AIGaAs Laser Diode Pulses at 1 kHz in Titanium-Doped Sapphire

Santanu Basu, Paul May, and Jean-Marc Halbout

Advanced Solid State Lasers 1989

Cape Cod, Massachusetts United States
ISBN: 1-55752-111-5

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Titanium:Sapphire Lasers (AA)

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S. Basu, P. May, and J. Halbout, "Amplification of 25-ps AIGaAs Laser Diode Pulses at 1 kHz in Titanium-Doped Sapphire," in Advanced Solid State Lasers, M. Shand and H. Jenssen, eds., Vol. 5 of OSA Proceedings Series (Optica Publishing Group, 1989), paper AA5.

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Abstract

Amplification of 25-ps diode laser pulses at 1 kHz repetition rate in Ti:Al₂O₃ is reported. The method of injection seeding is suggested to construct subpicosecond laser sources near 850 nm.

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