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Excited State Absorption and 4F3/2 Lifetime shortening in Diode Pumped Nd:YLF Q-switch lasers

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Abstract

For Q-switching, Nd:YliF4 offers due to its longer 4F3/2 lifetime advantages against Nd:YAG. Diode pumped Q-switch lasers based on Nd:YLF with energies of a few hundreds of microjoules are already commercial available. Due to its excellent TEM00 beam quality and the possibility of repetition rates up to several Kilohertz these lasers find industrial applications for marking, wafer processing, resistor trimming, fine tuning of oscillators etc.

© 1992 Optical Society of America

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