Efficient 2μm Ho:YLF laser operation at 200K

A. Neri; M. Tonelli; Hans P. Jenssen

doi:10.1364/ASSL.1992.ML13

Advanced Solid State Lasers
OSA Proceedings Series (Optica Publishing Group, 1992),
paper ML13
•https://doi.org/10.1364/ASSL.1992.ML13

Efficient 2μm Ho:YLF laser operation at 200K

A. Neri, M. Tonelli, and Hans P. Jenssen

Advanced Solid State Lasers 1992

Santa Fe, New Mexico United States
ISBN: 1-55752-224-3

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A. Neri, M. Tonelli, and H. P. Jenssen, "Efficient 2μm Ho:YLF laser operation at 200K," in Advanced Solid State Lasers, L. Chase and A. Pinto, eds., Vol. 13 of OSA Proceedings Series (Optica Publishing Group, 1992), paper ML13.

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Abstract

Efficient operation of the 2µm Ho laser at temperatures near room temperature is a requirement for this to be a practical laser. In earlier reported results on Ar laser pumped Ho:YLF sensitized by Er and Ho we demonstrated efficient operation at 77K[1]. The internal quantum efficiency was found to be near 300% and the overall power efficiency near 50%. This laser crystal was operated at 210K but with considerably lower efficiency.

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