Abstract
A diode-side-pumped ZnSe:Cr2+ laser was operated with a 75 - Watt peak power 1.65 µm InGaAsPAnP pump array. The laser was configured with a “single-bounce” architecture to maximize its round-trip gain. Peak output powers of ~0.3 Watt were obtained with a 10% - transmitting output coupler and a lightly-doped crystal. The estimated “mode fill” of ~0.06 will increase with Cr2+ concentration, raising the output power and extraction efficiency. With a grating tuner and MgF2:Co2+ laser pumping, the laser tuned throughout the 2134 - 2799 nm range.
© 1997 Optical Society of America
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