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12-micron infrared generation by difference frequency mixing in diffusion-bonded-stacked GaAs

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Abstract

Low optical loss 24 to 36-layer diffusion-bonded-stacked (DBS) GaAs was fabricated for quasi-phasematched nonlinear optical interactions. Mid-infrared radiation in the 10.5 to 12 micron region was generated by frequency mixing idlers from two electronically synchronized Nd:YVO4 pumped PPLN OPOs in DBS GaAs.

© 1998 Optical Society of America

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