Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > ASSL > 1998 > UL > UL8

Improvement of laser-induced damage threshold in CZ-BBO by reducing the light scattering center with annealing

H. Kouta and Y. Kuwano

Not Accessible

Your library or personal account may give you access

Abstract

The laser-induced damage threshold in β -BaB2O4 grown by Czochralski method ( CZ-BBO ) is improved by annealing at 920 °C to reduce the intensity of scattered light in the crystal. Experiments indicate that the reduction is generated as a result of dipole radiation vibrated along the z-axis. The threshold in 266 nm of annealed CZ-BBO is improved to 3.4 GW/cm2, which is 1.70 times higher than that of as-grown CZ-BBO and 1.13 times higher than that of as-grown Flux-BBO.

© 1998 Optical Society of America

PDF Article
More Like This
Laser Induced Optical Damage in KTP

Michael P. Scripsick and Gary E. Ruland
VL13 Advanced Solid State Lasers (ASSL) 1998

Efficient 213 nm and 266 nm generations in Czochralski-grown beta-barium borates

Shigeo Kubota, Hisashi Masuda, Hiroki Kikuchi, Kenji Kondo, Michio Oka, Koichi Tatsuki, Tsutomu Qkamoto, Nobuhiko Umezu, Tatsuo Fukui, Hiroyuki Wada, and Kaoru Morita
FC4 Diode Pumped Solid State Lasers: Applications and Issues (DLAI) 1998

β-BaB2O4 crystals grown by a new method

Y. KUWANO and H. KOUTA
CTHI29 Conference on Lasers and Electro-Optics (CLEO:S&I) 1990

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use