Mid- and High-Power Passively Q-Switched Microchip Lasers

John J. Zayhowski; Colby Dill; Chris Cook; John L. Daneu

doi:10.1364/ASSL.1999.TuC1

Advanced Solid State Lasers
OSA Trends in Optics and Photonics (Optica Publishing Group, 1999),
paper TuC1
•https://doi.org/10.1364/ASSL.1999.TuC1

Mid- and High-Power Passively Q-Switched Microchip Lasers

John J. Zayhowski, Colby Dill, Chris Cook, and John L. Daneu

Advanced Solid State Lasers 1999

Boston, Massachusetts United States
31 January–3 February 1999
ISBN: 1-55852-583-8

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1 Micron Lasers Part II (TuC)

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J. J. Zayhowski, C. Dill, C. Cook, and J. L. Daneu, "Mid- and High-Power Passively Q-Switched Microchip Lasers," in Advanced Solid State Lasers, M. Fejer, H. Injeyan, and U. Keller, eds., Vol. 26 of OSA Trends in Optics and Photonics (Optica Publishing Group, 1999), paper TuC1.

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Abstract

Passively Q-switched Nd:YAG microchip lasers have been developed that produce up to 250 μJ/pulse at 1.064 μm, with a pulse duration of 380 ps. The infrared output has been harmonically converted to 532, 355, and 266 nm with high efficiency.

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