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Development of ytterbium doped Sr5(PO4)3F for high-energy diode-pumped lasers

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Abstract

We describe progress made in the growth of defect-free Yb3+:Sr5(PO4)3F (Yb:S-FAP) and present results of laser characterization of these crystals for high-energy, Q-switched operation. Growth of Yb:S-FAP at 45° from the c-axis yielded what is believed to be the first crystal grown free of any slip dislocation defects. This crystal contains ~50% more active Yb3+ ions than previous crystals grown along the a-axis using identical concentrations of Yb3+ in the melt. Q-switched pulses can be extracted from these crystals at fluence levels over 3 times the saturation fluence (11 J/cm2) without optical damage to the crystals indicating that this material is suitable for high-energy, Q-switched operation.

© 2000 Optical Society of America

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