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Passively mode-locked diode-pumped surface-emitting semiconductor laser

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Abstract

For the first time we passively mode-locked a vertical-extemal-cavity surface- emitting laser using a semiconductor saturable absorber mirror. We achieved 5-ps pulses with 15.3 mW average power or 12-ps pulses with 40 mW.

© 2000 Optical Society of America

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