Abstract
Tm:Ho co-doped crystals of YLiF4 (YLF) and LuLiF4 (LuLF) are studied for 2.0 μm laser applications. Energy levels and cross sections are determined for the manifolds involved in 2.0 μm lasing. Diode side-pumped laser performance shows Tm:Ho:LuLF to have a lower threshold and higher slope efficiency than Tm:Ho:YLF. An explanation for the improved performance of Tm:Ho:LuLF over Tm:Ho:YLF through modeling of the laser is presented.
© 2002 Optical Society of America
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