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High-peak-power Optically-pumped AlGaInAs Eye-safe Laser with a Sandwiched Gain Chip Structure and a Silicon Wafer Output Coupler to Form a Compact Cavity

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Abstract

An intrinsic silicon wafer is exploited as an output-coupler to develop a high-peak-power optically-pumped AlGaInAs laser at 1.52 µm. The gain chip is sandwiched between diamond heat-spreaders and Si-wafer to form a compactly stack cavity.

© 2015 Optical Society of America

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