Abstract
We investigated infrared photon emission mechanisms in the Si light-emitting diode fabricated by dressed-photon-phonon-assisted annealing. Photoluminescence measurements indicated that triple optical phonons played an important role in the high-power infrared emission of 200 mW.
© 2017 Optical Society of America
PDF ArticleMore Like This
T. Patrick Xiao, Kaifeng Chen, Parthiban Santhanam, Shanhui Fan, and Eli Yablonovitch
PW3A.7 Optical Nanostructures and Advanced Materials for Photovoltaics (SOLED) 2017
S. M. Buckley, M. J. Stevens, S. W. Nam, R. P. Mirin, and J. M. Shainline
SM3O.6 CLEO: Science and Innovations (CLEO:S&I) 2017
Ashwini Gopal, Kazunori Hoshino, Sunmin Kim, and Xiaojing Zhang
CMH3 Conference on Lasers and Electro-Optics (CLEO:S&I) 2009