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Spectral Analysis of a High-Power Infrared Silicon Light Emitting Diode of Dressed Photons

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Abstract

We investigated infrared photon emission mechanisms in the Si light-emitting diode fabricated by dressed-photon-phonon-assisted annealing. Photoluminescence measurements indicated that triple optical phonons played an important role in the high-power infrared emission of 200 mW.

© 2017 Optical Society of America

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