Abstract
We report strong IR photo-and electroluminescence in the temperature range of 225 to 303 K as well as morphology measurements in Ge quantum dots layer being grown by ion beam implantation technique via high temperature annealing fo self-organization.
© 2018 The Author(s)
PDF ArticleMore Like This
N.S. Balakleiskiy, N.N. Gerasimenko, O.A. Zaporozhan, D.M. Zhigunov, and I.V. Sagunova
JM5A.13 Advanced Solid State Lasers (ASSL) 2017
Xia Chen, Milan M. Milosevic, Ali Z. Khokhar, David J. Thomson, and Graham T. Reed
Th3C.3 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2018
Bo-Rui Wu, Po-Lun Yeh, and Guo-En Chang
21p_C304_4 JSAP-Optica Joint Symposia (JSAP) 2022