Diode-pumped Picosecond 640-nm Pr:YLF Regenerative Laser Amplifier

Fumihiko Kannari; Yusaku Hara; Naoto Sugiyama; Shogo Fujita; Hiroki Tanaka

doi:10.1364/ASSL.2019.ATh4A.4

Laser Congress 2019 (ASSL, LAC, LS&C)
OSA Technical Digest (Optica Publishing Group, 2019),
paper ATh4A.4
•https://doi.org/10.1364/ASSL.2019.ATh4A.4

Diode-pumped Picosecond 640-nm Pr:YLF Regenerative Laser Amplifier

Fumihiko Kannari, Yusaku Hara, Naoto Sugiyama, Shogo Fujita, and Hiroki Tanaka

Advanced Solid State Lasers 2019

Vienna Austria
29 September–3 October 2019
ISBN: 978-1-943580-68-2

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Lasers for special applications (ATh4A)

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F. Kannari, Y. Hara, N. Sugiyama, S. Fujita, and H. Tanaka, "Diode-pumped Picosecond 640-nm Pr:YLF Regenerative Laser Amplifier," in Laser Congress 2019 (ASSL, LAC, LS&C), OSA Technical Digest (Optica Publishing Group, 2019), paper ATh4A.4.

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Abstract

We demonstrated generative picosecond laser pulse amplification at 640 nm for the first time using a Pr³⁺:YLF crystal, which was continuously pumped by an InGaN diode laser, with a mode-locked Pr³⁺:YLF oscillator.

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