Monolithic In0.83Ga0.17As Multiple Quantum Well Light- Emitting Diodes using InAsPSb Wide Bandgap Barrier

Suho Park; Suho Park; Phuc Dinh Nguyen; Phuc Dinh Nguyen; Minkyeong Kim; Minkyeong Kim; Jiyeon Jeon; Yeongho Kim; Yeongho Kim; Sang Jun Lee; Sang Jun Lee

doi:10.1364/ASSL.2022.JTu6A.1

Optica Advanced Photonics Congress 2022
Technical Digest Series (Optica Publishing Group, 2022),
paper JTu6A.1
•https://doi.org/10.1364/ASSL.2022.JTu6A.1

Monolithic In_0.83Ga_0.17As Multiple Quantum Well Light- Emitting Diodes using InAsPSb Wide Bandgap Barrier

Suho Park, Phuc Dinh Nguyen, Minkyeong Kim, Jiyeon Jeon, Yeongho Kim, and Sang Jun Lee

Advanced Solid State Lasers 2022

Barcelona Spain
11–15 December 2022
ISBN: 978-1-957171-20-3

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Joint Student Poster Session II-A (In-Person) (JTu6A)

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S. Park, P. D. Nguyen, M. Kim, J. Jeon, Y. Kim, and S. J. Lee, "Monolithic In0.83Ga0.17As Multiple Quantum Well Light- Emitting Diodes using InAsPSb Wide Bandgap Barrier," in Optica Advanced Photonics Congress 2022, Technical Digest Series (Optica Publishing Group, 2022), paper JTu6A.1.

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Abstract

Monolithic InGaAs/InAsPSb MQW LEDs have been demonstrated. The eSWIR light sources are fully strain-relaxed on the InAs_xP_1-_x metamorphic virtual substrate. The novel InAsPSb barrier can successfully enhance the confinement of the electrons in QWs.

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