Selective Ultrashort-Laser Crystallization of Amorphous Ge/Si Multilayer Stacks

Alexander V. Bulgakov; Vladimir A. Volodin; Vladimir A. Volodin; Yuzhu Cheng; Yoann Levy; Jiří Beránek; Jiří Beránek; Siva S. Nagisetty; Siva S. Nagisetty; Martin Zukerstein; Alexander A. Popov; Nadezhda M. Bulgakova

doi:10.1364/ASSL.2022.JW3A.16

Optica Advanced Photonics Congress 2022
Technical Digest Series (Optica Publishing Group, 2022),
paper JW3A.16
•https://doi.org/10.1364/ASSL.2022.JW3A.16

Selective Ultrashort-Laser Crystallization of Amorphous Ge/Si Multilayer Stacks

Alexander V. Bulgakov, Vladimir A. Volodin, Yuzhu Cheng, Yoann Levy, Jiří Beránek, Siva S. Nagisetty, Martin Zukerstein, Alexander A. Popov, and Nadezhda M. Bulgakova

Advanced Solid State Lasers 2022

Barcelona Spain
11–15 December 2022
ISBN: 978-1-957171-20-3

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Joint Poster Session III- A (In-Person) (JW3A)

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A. V. Bulgakov, V. A. Volodin, Y. Cheng, Y. Levy, J. Beránek, S. S. Nagisetty, M. Zukerstein, A. A. Popov, and N. M. Bulgakova, "Selective Ultrashort-Laser Crystallization of Amorphous Ge/Si Multilayer Stacks," in Optica Advanced Photonics Congress 2022, Technical Digest Series (Optica Publishing Group, 2022), paper JW3A.16.

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Abstract

Germanium nanocrystallites in an amorphous silicon matrix are produced by selective crystallization of a-Ge/Si multilayer stacks using near- and mid-infrared ultrashort-pulse lasers. Several non-ablative annealing regimes are revealed by Raman spectroscopy. Crystallization mechanisms are discussed.

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