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Conferences > ASSP > 2003 > NS > 395

Widely tunable, aluminum-free, GaSb-based, mid-infrared semiconductor lasers

A. K. Goyal, G. W. Turner, A. Sanchez, M. J. Manfra, P. J. Foti, and P. O’Brien

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Abstract

An external cavity tuning range of 0.3 µm, at a center wavelength of 3.8 µm, is demonstrated from an optically pumped, aluminum-free semiconductor laser grown on a GaSb substrate, with a peak single-facet output power of 0.65 W.

© 2003 Optical Society of America

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