En route to electrically pumpable Cr2+ doped II-VI semiconductor lasers broadly tunable over middle-infrared range of optical spectra

A. Gallian; V.V. Fedorov; J. Kernal; J. Allman; S.B. Mirov; E.M. Dianov; A.O. Zabezhaylov; I.P. Kazakov

doi:10.1364/ASSP.2005.246

Advanced Solid-State Photonics (TOPS)
OSA Trends in Optics and Photonics (Optica Publishing Group, 2005),
paper 246
•https://doi.org/10.1364/ASSP.2005.246

En route to electrically pumpable Cr²⁺ doped II-VI semiconductor lasers broadly tunable over middle-infrared range of optical spectra

A. Gallian, V.V. Fedorov, J. Kernal, J. Allman, S.B. Mirov, E.M. Dianov, A.O. Zabezhaylov, and I.P. Kazakov

Advanced Solid-State Photonics 2005

Vienna Austria
6–9 February 2005
ISBN: 1-55752-792-X

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Lasers:Mid-IR Lasers (MIR)

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A. Gallian, V. V. Fedorov, J. Kernal, J. Allman, S. B. Mirov, E. M. Dianov, A. O. Zabezhaylov, and I. P. Kazakov, "En route to electrically pumpable Cr2+ doped II-VI semiconductor lasers broadly tunable over middle-infrared range of optical spectra," in Advanced Solid-State Photonics (TOPS), C. Denman and I. Sorokina, eds., Vol. 98 of OSA Trends in Optics and Photonics (Optica Publishing Group, 2005), paper 246.

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Abstract

Cr:ZnSe thin films were grown by molecular beam epitaxy (MBE) with the long-term goal of demonstrating a new route for electrically pumpable transitional metal doped semiconductor lasers. Photoluminescence (PL) and PL lifetime measurements of doped thin films and bulk crystals indicate that Cr is incorporated in the optically active Cr²⁺ state to levels of 5⨉10¹⁹ cm⁻³. The shape of PL spectra and lifetime measurements of doped thin film compares favorably with for bulk samples. A microcavity formed by film interfaces provides wavelength modulation and is believed to be responsible for the differences in spontaneous emission observed between films and bulk.

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