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1003 nm Single-Frequency High-Power Optically Pumped Semiconductor Laser

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Abstract

We report high power single-frequency laser operation at λ = 1003 nm of an optically pumped external-cavity semiconductor laser in which the gain structure is bonded to a SiC heatspreader. Intracavity frequency-doubling is also demonstrated.

© 2006 Optical Society of America

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