Mid-infrared silicon Raman amplifier

Varun Raghunathan; David Borlaug; Robert Rice; Bahram Jalali

doi:10.1364/ASSP.2008.TuB1

Advanced Solid-State Photonics
OSA Technical Digest Series (CD) (Optica Publishing Group, 2008),
paper TuB1
•https://doi.org/10.1364/ASSP.2008.TuB1

Mid-infrared silicon Raman amplifier

Varun Raghunathan, David Borlaug, Robert Rice, and Bahram Jalali

Advanced Solid-State Photonics 2008

Nara Japan
27–30 January 2008
ISBN: 1-55752-850-0

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V. Raghunathan, D. Borlaug, R. Rice, and B. Jalali, "Mid-infrared silicon Raman amplifier," in Advanced Solid-State Photonics, OSA Technical Digest Series (CD) (Optica Publishing Group, 2008), paper TuB1.

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Abstract

Raman amplification is demonstrated in the mid infrared wavelength region in bulk silicon as well as integrated waveguides. 13dB of gain is achieved at 3.4 micron wavelength when silicon is pumped with 5nsec pulses at 2.9 microns.

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