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Er,Yb:YAl3(BO3)4: a new crystal for high-power ultrashort pulse generation around 1500nm

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Abstract

Efficient passive mode locking in a diode-pumped Er,Yb:YAl3(BO3)4 laser has been demonstrated using low-loss GaInNAs-based SESAMs. 3.2-ps and 5.1-ps pulses were produced at 1530nm and 1550nm, respectively, with corresponding average powers of 280mW and 103mW.

© 2008 Optical Society of America

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