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Ultrafast Laser Inscription of a High Gain Er-doped Bismuthate Glass Waveguide Amplifier

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Abstract

An Er-doped bismuthate glass waveguide amplifier has been fabricated using ultrafast laser inscription. The amplifier exhibits a peak net gain of ≈ 16.5 dB, and > 10.0 dB of net gain across the C-telecommunications band.

© 2010 Optical Society of America

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