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GaSb based 2 3 µm Semiconductor Disk Lasers: Versatile Lasers for High Power and Narrow Linewidth Emission

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Abstract

Highly efficient GaSb based semiconductor disk lasers operating in the 1.9 2.8 µm range have been realized. They reach output powers up to 10 W in CW operation with a high beam quality. By using wavelength selective intracavity elements, tunable single frequency emission was achieved with a heterodyne linewidth below 100 kHz (< 1.3 fm) at 1 W CW output power.

© 2012 Optical Society of America

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