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Narrow Linewidth 1120 nm Semiconductor Disk Laser Based on strain compensated GaInAs quantum wells

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Abstract

We demonstrate a semiconductor disk laser emitting ~0.8 W close to 1120 nm with a short-term linewidth <300 kHz without active stabilization. The disk laser gain mirror used strain compensated GaInAs quantum wells.

© 2012 Optical Society of America

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