Abstract
In 1994 Malo et al. reported that refractive index change of more than 2x10-4 is induced in phosphorus-doped SiO2 glasses after H2-loading treatment by irradiation with ArF( not KrF) excimer laser pulses. This is the first paper reporting a large index change in Ge-free SiO2 glasses. Here we examine defect formation in P-doped SiO2 glasses before and after H2-loading by excimer laser irradiation and consider the origin of the induced index change in H2-loaded specimen.
© 2001 Optical Society of America
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